中英
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diffusion technology中文是什么意思
發音:
- 中文翻譯
- 造句
- 擴散工藝
- diffusion of technology 技術擴散
- technology diffusion 科技普及
- agar diffusion technology 瓊脂擴散技術
- alloy diffusion technology 合金擴散工藝
- diffusion n. 1.散布，發散。 2.傳播，普及。 3.冗長。 4.【化學】滲濾。 5.【物理學】擴散，漫射。 the diffusion of knowledge 知識的傳播。 diffusion of speech 演說的冗長。 diffusion of light 光線的漫射。
- in diffusion 向內擴散
- technology n. 1.技術，工程，工藝。 2.制造學，工藝學。 3.術語(匯編)。 science and technology 科學和技術。 the technology of sugar 制糖法。
- technology technology 技術力量
- heat diffusion; thermal diffusion 熱擴散
- abnormal diffusion 異常擴散
- accelerated diffusion 加速擴散
- activated diffusion 活化擴散
- active diffusion 有效浸提；有效擴散
- agar diffusion 瓊脂擴散法
- air diffusion 空氣擴散
- albedo of diffusion 擴散反射系數
- alloy diffusion 合金擴散
- ambipolar diffusion 兩極性擴散; 雙極擴散; 雙極性擴散
- amplifier diffusion 擴散放大器
- anisotropic diffusion 各向不均擴散
- anomalous diffusion 反常擴散
- anti diffusion 反擴散
- atmospheric diffusion 大氣擴散
- atomic diffusion 原子擴散
- augmented diffusion 增加擴散
- In recent years, by use of the characters including high-penetration ability of ga in sio2, small diffusion stress in si, large diffusion efficiency and large solid-solubility, open-tube ga-diffusion technology in sio2 / si system was realized
近年來，巧妙地利用ga具有強穿透sio_2的能力，在si中具有擴散應力小、擴散系數大、固溶度較大等特點，實現了開管sio_2si系下的擴散。 - With the development of doping technology, the formation of the base region in high-voltage transistor can be made by b diffusion technology, b-a1 paste-layer diffusion technology, close-tube ga-diffusion technology and open-tube gallium-diffusion technology
隨著摻雜工藝的不斷發展，高反壓晶體管基區的形成經歷了擴硼工藝、硼鋁涂層擴散工藝、閉管擴鎵工藝到開管擴鎵工藝的發展。 - With the development of doping technology, the formation of the base region in high-voltage transistor can be made by b diffusion technology, b-a1 paste-layer diffusion technology, close-tube ga-diffusion technology and open-tube gallium-diffusion technology
隨著摻雜工藝的不斷發展，高反壓晶體管基區的形成經歷了擴硼工藝、硼鋁涂層擴散工藝、閉管擴鎵工藝到開管擴鎵工藝的發展。 - With the development of doping technology, the formation of the base region in high-voltage transistor can be made by b diffusion technology, b-a1 paste-layer diffusion technology, close-tube ga-diffusion technology and open-tube gallium-diffusion technology
隨著摻雜工藝的不斷發展，高反壓晶體管基區的形成經歷了擴硼工藝、硼鋁涂層擴散工藝、閉管擴鎵工藝到開管擴鎵工藝的發展。 - With the development of doping technology, the formation of the base region in high-voltage transistor can be made by b diffusion technology, b-a1 paste-layer diffusion technology, close-tube ga-diffusion technology and open-tube gallium-diffusion technology
隨著摻雜工藝的不斷發展，高反壓晶體管基區的形成經歷了擴硼工藝、硼鋁涂層擴散工藝、閉管擴鎵工藝到開管擴鎵工藝的發展。 - At the initial stage of planar technique, b was employed as ideal diffusion impurity in base-region of npn si planar devices because of the match of its solid-solubility and diffusion coefficient in si with those of p in emission-region, and the good shield effect of sio2 film to b . but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly-changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high-reversal-voltage devics . thereafter b-a1 paste-layer diffusion technology and close-tube ga-diffusion technology had been developed, while the former can lead to relatively large the base-region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency
在平面工藝初期，由于b在硅中的固溶度、擴散系數與n型發射區的磷相匹配，sio_2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大(1000時達到510~(20)，擴散系數小，b在硅中的雜質分布不易形成pn結中雜質的線性緩變分布，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁涂層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t_f值較高，熱穩定性差；后者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。 - At the initial stage of planar technique, b was employed as ideal diffusion impurity in base-region of npn si planar devices because of the match of its solid-solubility and diffusion coefficient in si with those of p in emission-region, and the good shield effect of sio2 film to b . but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly-changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high-reversal-voltage devics . thereafter b-a1 paste-layer diffusion technology and close-tube ga-diffusion technology had been developed, while the former can lead to relatively large the base-region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency
在平面工藝初期，由于b在硅中的固溶度、擴散系數與n型發射區的磷相匹配，sio_2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大(1000時達到510~(20)，擴散系數小，b在硅中的雜質分布不易形成pn結中雜質的線性緩變分布，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁涂層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t_f值較高，熱穩定性差；后者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。
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